US Patent Issued to MACRONIX INTERNATIONAL on June 24 for "Memory device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,541, issued on June 24, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory device and method for forming the same" was invented by Erh-Kun Lai (Taichung, Taiwan) and Feng-Min Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit structure includes a substrate, an interconnect stack, a first memory array, and a source line. The interconnect stack is over the substrate. The first memory array is over the interconnect stack and includes memory elements stacked in a vertical direction each comprising a conductive layer. The first memory array further includes a memory layer electrically connect...