ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,069, issued on Jan. 27, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).
"Memory device and control method thereof" was invented by Shih-Chang Huang (Penghu County, Taiwan) and Han-Sung Chen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a memory device and a control method thereof. The memory device may be a high-capacity and high-performance three-dimensional NAND flash memory. The control method includes the following steps. Data for performing a programming operation on a specific memory cell area is obtained. A number of memory cells in a predetermined potential state in the data are counted as a...