US Patent Issued to MACRONIX INTERNATIONAL on Jan. 13 for "Memory device and method for operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,009, issued on Jan. 13, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory device and method for operating the same" was invented by Erh-Kun Lai (Taichung County, Taiwan) and Hsiang-Lan Lung (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a method for operating a memory device are provided. The memory device includes a stack structure including a memory array stack and a staircase stack, an insulating film on the memory array stack, a conductive film on the staircase stack and on a sidewall of the insulating film, a pillar element on the staircase stack and passing through the conductive ...