US Patent Issued to MACRONIX INTERNATIONAL on Jan. 13 for "Memory device and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,005, issued on Jan. 13, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory device and method for manufacturing the same" was invented by Erh-Kun Lai (Taichung County, Taiwan) and Feng-Min Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a method for manufacturing the same are provided. The memory device includes drain pillar structures, source pillar structures, memory structures surrounding the drain pillar structures respectively, a channel structure, and a gate structure surrounding the drain pillar structures, the source pillar structures and the channel structure. The channel struct...