ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,547,535, issued on Feb. 10, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).
"Memory device and in-memory searching method" was invented by Wen-Che Tsai (Hsin-Chu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and in-memory searching method are provided. The memory device is, for example, a three dimensional NAND flash memory circuit, and provides a storage media with high-performance and high-capacity. The memory device includes an address scanner, a searching data transmitter, a readout data sensor and comparator, an error bit detector, and a matching status processor. The address scanner provides a scanned ad...