US Patent Issued to MACRONIX International on Dec. 9 for "Memory device and error correction method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,264, issued on Dec. 9, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Memory device and error correction method thereof" was invented by Chun-Hsiung Hung (Hsin-Chu, Taiwan) and Hsin-Yi Ho (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a memory device and an error correction method thereof. The error correction method of the memory device includes: generating a first write-in bit and a second write-in bit according to a write-in data, and writing the first write-in bit and the second write-in bit into corresponding first memory cell and second memory cell respectively; in a reading mode, providing a ...