ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,399,622, issued on Aug. 26, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).
"High-level architecture for 3D-NAND based in-memory search" was invented by Po-Hao Tseng (Taichung, Taiwan) and Ming-Hsiu Lee (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A high-level architecture for 3D-NAND based in-memory search provides for receiving searches for application to select lines and word lines of a non-volatile 3D memory array. A search word is presented to a 3D-NAND memory along a direction of a bit line of the 3D-NAND memory. Each character of the word comprises a number of digits. Each digit is matched against respective ...