US Patent Issued to MACRONIX International on April 1 for "Memory device and method of fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,268,000, issued on April 1, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Memory device and method of fabricating the same" was invented by Chia-Tze Huang (Hsing-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a gate stack structure, a channel pillar, a plurality of conductive pillars, and a charge storage structure. The gate stack structure is located over a dielectric substrate, and includes a plurality of gate layers and a plurality of insulating layers stacked alternately with each other. The channel pillar extends through the gate stack structure. Each of the conductive pillars includes a bo...