ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,151, issued on Oct. 21, was assigned to MACOM TECHNOLOGY SOLUTIONS HOLDINGS INC. (Lowell, Mass.).
"Parasitic channel mitigation in semiconductor structures" was invented by Kevin J. Linthicum (Cary, N.C.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures that inhibit the conductivity of parasitic channels are described. In one example, a semiconductor structure includes a substrate, a III-nitride material region over a top surface of the substrate, a first species implanted within at least one region of surface region of the substrate in a first pattern spatially defined across a lateral dimension of the substrate, and a second ...