US Patent Issued to MACOM Technology Solutions Holdings on Nov. 4 for "High electron mobility transistors having reduced drain current drift and methods of fabricating such devices" (North Carolina Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,759, issued on Nov. 4, was assigned to MACOM Technology Solutions Holdings Inc. (Lowell, Mass.).

"High electron mobility transistors having reduced drain current drift and methods of fabricating such devices" was invented by Kyle Bothe (Cary, N.C.), Chris Hardiman (Cary, N.C.), Elizabeth Keenan (Cary, N.C.), Jia Guo (Apex, N.C.), Fabian Radulescu (Chapel Hill, N.C.) and Scott Sheppard (Chapel Hill, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor comprises a semiconductor layer structure that includes a channel layer and a barrier layer and source and drain contacts on the semiconductor layer structure. A gate c...