ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,524, issued on Jan. 20, was assigned to MACOM Technology Solutions Holdings Inc. (Lowell, Mass.).

"Multi-zone radio frequency transistor amplifiers" was invented by Kwangmo Chris Lim (San Jose, Calif.), Basim Noori (San Jose, Calif.), Qianli Mu (San Jose, Calif.), Marvin Marbell (Morgan Hill, Calif.), Scott Sheppard (Chapel Hill, N.C.) and Alexander Komposch (Morgan Hill, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal t...