ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,699, issued on Aug. 5, was assigned to MACOM TECHNOLOGY SOLUTIONS HOLDINGS INC. (Lowell, Mass.).

"Plasma-based barrier layer removal method for increasing peak transconductance while maintaining on-state resistance and related devices" was invented by Chris Hardiman (Morrisville, N.C.), Kyoung-Keun Lee (Cary, N.C.), Kyle Bothe (Cary, N.C.) and Fabian Radulescu (Chapel Hill, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device includes a semiconductor structure comprising a channel layer and a barrier layer; source and drain contacts on the semiconductor structure; and a gate on the semiconductor structure between the source and dra...