US Patent Issued to MACOM TECHNOLOGY SOLUTIONS HOLDINGS on April 1 for "Parasitic capacitance reduction in GaN-on-silicon devices" (Massachusetts, New Hampshire Inventors)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,523, issued on April 1, was assigned to MACOM TECHNOLOGY SOLUTIONS HOLDINGS INC. (Lowell, Mass.).

"Parasitic capacitance reduction in GaN-on-silicon devices" was invented by Gabriel R. Cueva (Bedford, N.H.), Timothy E. Boles (Tyngsboro, Mass.) and Wayne Mack Struble (Franklin, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures with reduced parasitic capacitance between interconnects and ground, for example, are described. An example method for making a semiconductor structure includes forming a trench in an interconnect area of a substrate between first and second device areas in the semiconductor structure, forming a low ...