US Patent Issued to LYNRED on Dec. 30 for "Method for fabricating a photodiode structure and photodiode structure" (French Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,514,022, issued on Dec. 30, was assigned to LYNRED (Palaiseau, France).

"Method for fabricating a photodiode structure and photodiode structure" was invented by Nicolas Pere-Laperne (Grenoble, France), Alexandre Kerlain (Grenoble, France), Vincent Destefanis (Claix, France) and Paul Fougeres (Veurey-Voroize, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate to fabricate a photodiode structure has a top layer made from cadmium-doped semiconductor material. A first HgCdTe-base layer is formed by liquid phase epitaxy from the top layer with a bath containing an n-type electrically active dopant to electrically dope the first layer. The cadm...