US Patent Issued to LPE on June 10 for "Method for CVD deposition of n-type doped silicon carbide and epitaxial reactor" (Italian Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,325,932, issued on June 10, was assigned to LPE S.p.A. (Baranzate, Italy).

"Method for CVD deposition of n-type doped silicon carbide and epitaxial reactor" was invented by Silvio Preti (Baranzate, Italy) and Gianluca Cividini (Baranzate, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "The method serves for depositing a layer of silicon carbide with n-type doping onto a surface of a substrate placed horizontally on a rotating susceptor inside a reaction chamber by means of a CVD type process; the rotating susceptor is adapted to single-substrate support; the method includes introducing and flowing a gaseous mixture internally along the reaction cha...