US Patent Issued to LOT CES on Jan. 27 for "Inductively coupled plasma apparatus for exhaust gas treatment and impedance matching method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,166, issued on Jan. 27, was assigned to LOT CES Co. LTD. (Osan-si, South Korea).

"Inductively coupled plasma apparatus for exhaust gas treatment and impedance matching method thereof" was invented by Jin Ho Bae (Hwaseong-si, South Korea), Min Jae Kim (Ansan-si, South Korea) and Sang Don Choi (Gunpo-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An inductively coupled plasma apparatus for exhaust gas treatment, includes: an inductively coupled plasma reactor installed on an exhaust pipe through which exhaust gas generated from a process chamber of a semiconductor manufacturing facility is discharged; a power supply configured to suppl...