US Patent Issued to LONGITUDE FLASH MEMORY SOLUTIONS on Nov. 4 for "Nonvolatile charge trap memory device having a high dielectric constant blocking region" (American, Israeli Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,780, issued on Nov. 4, was assigned to LONGITUDE FLASH MEMORY SOLUTIONS LTD. (Dublin).

"Nonvolatile charge trap memory device having a high dielectric constant blocking region" was invented by Igor Polishchuk (Fremont, Calif.), Sagy Charel Levy (Zichron Yaakov, Israel) and Krishnaswamy Ramkumar (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment of a nonvolatile charge trap memory device is described. In one embodiment, the device comprises a channel comprising silicon overlying a surface on a substrate electrically connecting a first diffusion region and a second diffusion region of the memory device, and a gate stack inte...