US Patent Issued to LONGITUDE FLASH MEMORY SOLUTIONS on April 1 for "Oxide-nitride-oxide stack having multiple oxynitride layers" (American, Israeli Inventors)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,521, issued on April 1, was assigned to LONGITUDE FLASH MEMORY SOLUTIONS LTD. (Dublin).

"Oxide-nitride-oxide stack having multiple oxynitride layers" was invented by Sagy Charel Levy (Zichron Yaakov, Israel), Krishnaswamy Ramkumar (San Jose, Calif.), Fredrick Jenne (Mountain House, Calif.) and Sam G. Geha (Cupertino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including an oxide-nitride-oxide (ONO) structure having a multi-layer charge storing layer and methods of forming the same are provided. Generally, the method involves: (i) forming a first oxide layer of the ONO structure; (ii) forming a multi-layer charge stor...