US Patent Issued to Lingnan Normal University on March 18 for "Preparation method for narrow-linewidth alloy quantum dot" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,252,641, issued on March 18, was assigned to Lingnan Normal University (China).

"Preparation method for narrow-linewidth alloy quantum dot" was invented by Qinghua Li (Zhanjiang, China), Lingfeng Wang (Zhanjiang, China), Xuping Liu (Zhanjiang, China), Xiao Jin (Zhanjiang, China), Dongyu Li (Zhanjiang, China), Deng Wang (Zhanjiang, China), Jingke Bai (Zhanjiang, China) and Bing Xu (Zhanjiang, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure belongs to the technical field of nanomaterial synthesis, and in particular, to a preparation method for a core-shell structure quantum dot. The preparation method provided by the present d...