ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,782, issued on Nov. 18, was assigned to LG DISPLAY Co. LTD. (Seoul, South Korea).

"Thin film transistor, method of manufacturing the thin film transistor, and display apparatus including the thin film transistor" was invented by JeongSuk Yang (Paju-si, South Korea), KwangMin Jo (Paju-si, South Korea) and Sohyung Lee (Paju-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A display apparatus can include a first thin film transistor including a first active layer including polycrystalline silicon, a first gate electrode overlapping the first active layer with a first gate insulation layer therebetween, and a first source electrode and a f...