US Patent Issued to LEAP Semiconductor on July 29 for "Semiconductor power device and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,331, issued on July 29, was assigned to LEAP Semiconductor Corp. (Taoyuan, Taiwan).

"Semiconductor power device and method of manufacturing the same" was invented by Wei-Fan Chen (Taichung, Taiwan) and Kuo-Chi Tsai (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor power device includes a substrate, a drift layer disposed on the substrate, buried doped regions, gates, a gate insulation layer, well regions, source regions, and well contact regions. The buried doped regions are in the drift layer and parallel to each other, and each of the buried doped regions is a predetermined distance from an upper surface of the drift ...