US Patent Issued to LEAP Semiconductor on Aug. 26 for "Method of manufacturing silicon carbide semiconductor power device" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,390, issued on Aug. 26, was assigned to LEAP Semiconductor Corp. (Taoyuan, Taiwan).

"Method of manufacturing silicon carbide semiconductor power device" was invented by Wei-Fan Chen (Taichung, Taiwan) and Kuo-Chi Tsai (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a silicon carbide semiconductor power device is provided. In the method, the power device in high voltage (HV) region and CMOS device in the low voltage (LV) region are formed together, so the cost and time can be saved efficiently. First, a first drift layer is formed on a substrate, and then a shielding region is formed in the first drift layer....