US Patent Issued to Lam Research on Sept. 9 for "Impurity reduction in silicon-containing films" (Oregon, California Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,742, issued on Sept. 9, was assigned to Lam Research Corp. (Fremont, Calif.).

"Impurity reduction in silicon-containing films" was invented by Awnish Gupta (Hillsboro, Ore.), Bart J. Van Schravendijk (Palo Alto, Calif.), Jason Alexander Varnell (Tigard, Ore.), Joseph R. Abel (West Linn, Ore.), Jennifer Leigh Petraglia (Lake Oswego, Ore.) and Adrien LaVoie (Newberg, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments herein relate to methods and apparatus for depositing doped and undoped silicon-containing films having a high degree of purity. In one example, the method includes exposing the substrate to a first reactant and a se...