US Patent Issued to Lam Research on Sept. 30 for "In-situ control of film properties during atomic layer deposition" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,349, issued on Sept. 30, was assigned to Lam Research Corp. (Fremont, Calif.).

"In-situ control of film properties during atomic layer deposition" was invented by Douglas Walter Agnew (Portland, Ore.), Joseph R. Abel (West Linn, Ore.), Ian John Curtin (Portland, Ore.), Purushottam Kumar (Hillsboro, Ore.) and Awnish Gupta (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of providing control of film properties during atomic layer deposition using intermittent plasma treatment in-situ are provided herein. Methods include modulating gas flow rate ratios used to generate plasma during intermittent plasma treatment, toggling plasma...