ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,916, issued on Sept. 16, was assigned to Lam Research Corp. (Fremont, Calif.).
"Tin oxide films in semiconductor device manufacturing" was invented by Jengyi Yu (San Ramon, Calif.), Samantha S. H. Tan (Fremont, Calif.), Yu Jiang (San Jose, Calif.), Hui-Jung Wu (Pleasanton, Calif.), Richard Wise (Los Gatos, Calif.), Yang Pan (Los Altos, Calif.), Nader Shamma (Cupertino, Calif.) and Boris Volosskiy (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Tin oxide film on a semiconductor substrate is etched selectively in a presence of photoresist by exposing the substrate to at least one of hydrogen-based chemistry and chlorine-based chemist...