ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,995, issued on Oct. 7, was assigned to Lam Research Corp. (Fremont, Calif.).

"Tin oxide films in semiconductor device manufacturing" was invented by Jengyi Yu (San Ramon, Calif.), Samantha S. H. Tan (Newark, Calif.), Yu Jiang (Sunnyvale, Calif.), Hui-Jung Wu (Pleasanton, Calif.), Richard Wise (Los Gatos, Calif.), Yang Pan (Los Altos, Calif.), Nader Shamma (Cupertino, Calif.) and Boris Volosskiy (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a substrate includes: providing a substrate having one or more mandrels comprising a mandrel material, wherein a layer of a spacer material coats horizontal surfaces and si...