US Patent Issued to Lam Research on Oct. 21 for "Modulated atomic layer deposition" (California, Oregon Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,346, issued on Oct. 21, was assigned to Lam Research Corp. (Fremont, Calif.).

"Modulated atomic layer deposition" was invented by Chan Myae Myae Soe (Santa Clara, Calif.), Chloe Baldasseroni (Portland, Ore.), Shiva Sharan Bhandari (Sherwood, Ore.), Pulkit Agarwal (Beaverton, Ore.), Adrien LaVoie (Newberg, Ore.) and Bart J. Van Schravendijk (Palo Alto, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and apparatuses for depositing thin films using long and short conversion times during alternating cycles of atomic layer deposition (ALD) are provided herein. Embodiments involve alternating conversion duration of an ALD cycle in one or mor...