ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,448,687, issued on Oct. 21, was assigned to Lam Research Corp. (Fremont, Calif.).
"Dynamic precursor dosing for atomic layer deposition" was invented by Purushottam Kumar (Hillsboro, Ore.), Adrien LaVoie (Newberg, Ore.), Jun Qian (Sherwood, Ore.), Hu Kang (Tualatin, Ore.), Ishtak Karim (San Jose, Calif.) and Fung Suong Ou (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber ...