US Patent Issued to Lam Research on Nov. 25 for "Selective attachment to enhance SiO 2 :SiN x etch selectivity" (California, Colorado Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,479,004, issued on Nov. 25, was assigned to Lam Research Corp. (Fremont, Calif.).

"Selective attachment to enhance SiO 2 :SiN x etch selectivity" was invented by Eric A. Hudson (Berkeley, Calif.), Chia-Chun Wang (Fremont, Calif.), Sumit Agarwal (Arvada, Colo.) and Ryan James Gasvoda (Golden, Colo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and apparatuses for selectively etching silicon-and-oxygen-containing material relative to silicon-and-nitrogen-containing material by selectively forming a carbon-containing self-assembled monolayer on a silicon-and-nitrogen-containing material relative to a silicon-and-oxygen-containing material are prov...