US Patent Issued to Lam Research on Nov. 18 for "Integration of dry development and etch processes for EUV patterning in a single process chamber" (California, Washington Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,474,640, issued on Nov. 18, was assigned to Lam Research Corp. (Fremont, Calif.).

"Integration of dry development and etch processes for EUV patterning in a single process chamber" was invented by Younghee Lee (Pleasanton, Calif.), Da Li (Newark, Calif.), Hongxiang Zhao (San Jose, Calif.), Ji Yeon Kim (Sunnyvale, Calif.), Samantha S. H. Tan (Newark, Calif.), Daniel Peter (Sunnyvale, Calif.), Nader Shamma (Cupertino, Calif.), Michelle Margarita Flores Espinosa (Union City, Calif.), Jun Xue (Fremont, Calif.) and Patrick A. Van Cleemput (Castle Rock, Wash.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Process condition management facilitates the combinati...