ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,143, issued on Nov. 18, was assigned to Lam Research Corp. (Fremont, Calif.).
"Backside reactive inhibition gas" was invented by Gang Liu (Fremont, Calif.), Anand Chandrashekar (Fremont, Calif.), Tsung-Han Yang (San Jose, Calif.), Michael Bowes (Scotts Valley, Calif.), Leonard Wai Fung Kho (San Francisco) and Eric H. Lenz (Livermore, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include providing a backside inhibition gas as part of a deposition-inhibition-deposition (DID) sequence....