US Patent Issued to Lam Research on March 25 for "Tungsten feature fill with inhibition control" (California Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,081, issued on March 25, was assigned to Lam Research Corp. (Fremont, Calif.).

"Tungsten feature fill with inhibition control" was invented by Tsung-Han Yang (San Jose, Calif.), Michael Bowes (Scotts Valley, Calif.), Gang Liu (Fremont, Calif.) and Anand Chandrashekar (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for selective inhibition control in semiconductor manufacturing are provided. An example method includes providing a substrate including a feature having one or more feature openings and a feature interior. A nucleation layer is formed on a surface of the feature interior. Based on a differential inhibition profile...