US Patent Issued to Lam Research on March 18 for "Chemical etch nonvolatile materials for MRAM patterning" (Belgian, American Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,645, issued on March 18, was assigned to Lam Research Corp. (Fremont, Calif.).

"Chemical etch nonvolatile materials for MRAM patterning" was invented by Wenbing Yang (Campbell, Calif.), Tamal Mukherjee (Fremont, Calif.), Zhongwei Zhu (Sunnyvale, Calif.), Samantha SiamHwa Tan (Newark, Calif.), Ran Lin (Fremont, Calif.), Yang Pan (Los Altos, Calif.), Ziad El Otell (Leuven, Belgium) and Yiwen Fan (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided. A substrate situated in a chamber is exposed to a halogen-containing gas comprising an element selected from the group consisting of silicon, germanium, carbon, titanium, an...