ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,002, issued on June 24, was assigned to Lam Research Corp. (Fremont, Calif.).
"Low stress films for advanced semiconductor applications" was invented by Reza Bayati (Portland, Ore.), Bart J. van Schravendijk (Palo Alto, Calif.), Jonathan Church (Portland, Ore.) and Keith Fox (Tigard, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Films that can be useful in large area gap fill applications, such as in the formation of advanced 3D NAND devices, involve processing a semiconductor substrate by depositing on a patterned semiconductor substrate a doped silicon oxide film, the film having a thickness of at least 5 micro metre, and annealing the doped...