US Patent Issued to Lam Research on June 17 for "Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors" (Oregon, Illinois Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,332, issued on June 17, was assigned to Lam Research Corp. (Fremont, Calif.).

"Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors" was invented by Bhadri N. Varadarajan (Beaverton, Ore.), Matthew Scott Weimer (Chicago), Galbokka Hewage Layan Savithra (Lake Oswego, Ore.), Bo Gong (Sherwood, Ore.) and Zhe Gui (Beaverton, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such...