ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,351, issued on June 17, was assigned to Lam Research Corp. (Fremont, Calif.).
"Molybdenum deposition" was invented by Jeong-Seok Na (San Jose, Calif.), Yao-Tsung Hsieh (San Jose, Calif.), Chiukin Steven Lai (Sunnyvale, Calif.) and Patrick A. Van Cleemput (Duvall, Wash.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are methods of filling patterned features with molybdenum (Mo). The methods involve selective deposition of Mo films on bottom metal-containing surfaces of a feature including dielectric sidewalls. The selective growth of Mo on the bottom surface allows bottom-up growth and high quality, void-free fill. Also provided are related ...