ALEXANDRIA, Va., July 9 -- United States Patent no. 12,351,914, issued on July 8, was assigned to Lam Research Corp. (Fremont, Calif.).
"Deposition of films using molybdenum precursors" was invented by Joshua Collins (Sunnyvale, Calif.), Griffin John Kennedy (Livermore, Calif.), Hanna Bamnolker (Cupertino, Calif.), Patrick A. Van Cleemput (Duvall, Wash.) and Seshasayee Varadarajan (Lake Oswego, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some embodiments, thin metal oxynitride or metal nitride nucleation layers are deposited followed by deposition of a pure metal ...