ALEXANDRIA, Va., July 30 -- United States Patent no. 12,371,781, issued on July 29, was assigned to Lam Research Corp. (Fremont, Calif.).

"In situ protective coating of chamber components for semiconductor processing" was invented by Akhil Singhal (Beaverton, Ore.), David Charles Smith (Lake Oswego, Ore.) and Karl Frederick Leeser (West Linn, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An in situ protective coating is deposited on surfaces of chamber components of a reaction chamber at high temperatures. The in situ protective coating may be deposited at a temperature greater than about 200deg C. to provide a high quality coating that is resistant to certain types of halogen chemistries, such as fluo...