US Patent Issued to LAM RESEARCH on July 29 for "Extreme ultraviolet (EUV) lithography using an intervening layer or a multi-layer stack with varying mean free paths for secondary electron generation" (California, Oregon Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,372,872, issued on July 29, was assigned to LAM RESEARCH Corp. (Fremont, Calif.).

"Extreme ultraviolet (EUV) lithography using an intervening layer or a multi-layer stack with varying mean free paths for secondary electron generation" was invented by Andrew Liang (San Jose, Calif.), Nader Shamma (Cupertino, Calif.), Rich Wise (Los Gatos, Calif.), Akhil Singhal (Beaverton, Ore.), Arpan Pravin Mahorowala (West Linn, Ore.), Gregory Blachut (Campbell, Calif.) and Dustin Zachary Austin (Tigard, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for patterning a substrate includes providing a substrate, and depositing a multi-layer stack including N...