ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,075, issued on July 22, was assigned to Lam Research Corp. (Fremont, Calif.).
"Graphene integration" was invented by Bhadri N. Varadarajan (Beaverton, Ore.), Ieva Narkeviciute (Portland, Ore.) and Kashish Sharma (Tigard, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Graphene is deposited on a metal surface of a semiconductor substrate at a deposition temperature compatible with back-end-of-line semiconductor processing. The graphene may be annealed at a temperature between the deposition temperature and a temperature sensitive limit of materials in the semiconductor substrate to improve film quality. Alternatively, the graphene may be treated ...