US Patent Issued to Lam Research on July 15 for "Conformal deposition of silicon carbide films using heterogeneous precursor interaction" (Oregon Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,359,311, issued on July 15, was assigned to Lam Research Corp. (Fremont, Calif.).

"Conformal deposition of silicon carbide films using heterogeneous precursor interaction" was invented by Matthew Scott Weimer (Portland, Ore.), Bhadri N. Varadarajan (Beaverton, Ore.), Bo Gong (Sherwood, Ore.) and Zhe Gui (Beaverton, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energ...