ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,217,945, issued on Feb. 4, was assigned to Lam Research Corp. (Fremont, Calif.).

"Sorption chamber walls for semiconductor equipment" was invented by Hossein Sadeghi (San Jose, Calif.) and Richard A. Gottscho (Pleasanton, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A sorption structure used in a plasma process chamber includes an inner layer having one or more heating elements to heat the sorption structure, a middle section having a lattice structure and a coolant flow delivery network through which a coolant circulates to cool the sorption structure, and a vacuum flow network that is connected to a vacuum line to create low pressure vacuum. T...