ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,646, issued on Feb. 10, was assigned to Lam Research Corp. (Fremont, Calif.).
"Selectively etching for nanowires" was invented by Daniel Peter (Campbell, Calif.), Jun Xue (San Jose, Calif.), Samantha SiamHwa Tan (Fremont, Calif.), Yang Pan (Los Altos, Calif.), Younghee Lee (Pleasanton, Calif.) and Alexander Kabansky (Santa Clara, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for selectively etching silicon germanium with respect to silicon in a stack on a chuck in an etch chamber is provided. The chuck is maintained at a temperature below 15deg C. The stack is exposed to an etch gas comprising a fluorine containing gas to selectivel...