US Patent Issued to Lam Research on Dec. 30 for "Photoresist development with halide chemistries" (California Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,510,826, issued on Dec. 30, was assigned to Lam Research Corp. (Fremont, Calif.).

"Photoresist development with halide chemistries" was invented by Samantha SiamHwa Tan (Newark, Calif.), Jengyi Yu (San Ramon, Calif.), Da Li (Newark, Calif.), Yiwen Fan (Fremont, Calif.), Yang Pan (Los Altos, Calif.), Jeffrey Marks (Saratoga, Calif.), Richard A. Gottscho (Menlo Park, Calif.), Daniel Peter (Sunnyvale, Calif.), Timothy William Weidman (Sunnyvale, Calif.), Boris Volosskiy (San Jose, Calif.) and Wenbing Yang (Campbell, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Development of resists are useful, for example, to form a patterning mask in the context...