ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,047, issued on April 8, was assigned to Lam Research Corp. (Fremont, Calif.).
"Line bending control for memory applications" was invented by Gorun Butail (Fremont, Calif.), Shruti Thombare (Sunnyvale, Calif.), Ishtak Karim (San Jose, Calif.) and Patrick Van Cleemput (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for reducing bending of word lines in a memory cell includes a) providing a substrate including a plurality of word lines arranged adjacent to one another and above a plurality of transistors; b) depositing a layer of film on the plurality of word lines using a deposition process; c) after depositing the layer of f...