US Patent Issued to Lam Research on April 29 for "Modifying hydrophobicity of a wafer surface using an organosilicon precursor" (Oregon, Florida Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,685, issued on April 29, was assigned to Lam Research Corp. (Fremont, Calif.).

"Modifying hydrophobicity of a wafer surface using an organosilicon precursor" was invented by Jeremy D. Fields (Portland, Ore.), Awnish Gupta (Hillsboro, Ore.), Douglas W. Agnew (North Miami, Fla.), Joseph R. Abel (West Linn, Ore.) and Purushottam Kumar (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and apparatuses for modifying a wafer surface using an organosilicon precursor are provided herein. The wafer surface is dosed with the organosilicon precursor following deposition of a dielectric material by an atomic layer deposition (ALD) process. I...