US Patent Issued to Lam Research, International Business Machines on March 25 for "Multi-layer hardmask for defect reduction in EUV patterning" (New York, Oregon Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,044, issued on March 25, was assigned to Lam Research Corp. (Fremont, Calif.) and International Business Machines Corp. (Armonk, N.Y.).

"Multi-layer hardmask for defect reduction in EUV patterning" was invented by Bhaskar Nagabhirava (Tigard, Ore.), Phillip Friddle (Clifton Park, N.Y.), Ekimini Anuja De Silva (Slingerlands, N.Y.), Jennifer Church (Armonk, N.Y.), Dominik Metzler (Saratoga Springs, N.Y.) and Nelson Felix (Slingerlands, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments herein relate to methods, apparatus, and systems that utilize a multi-layer hardmask in the context of patterning a semiconductor substrate using ...