ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,562, issued on April 8, was assigned to L'Aire Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude (Paris).

"Oxygen and iodine-containing hydrofluorocarbon compound for etching semiconductor structures" was invented by Fabrizio Marchegiani (Wilmington, Del.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method comprises: introducing a vapor of an oxygen and iodine-containing etching compound into a chamber that contains a substrate having a silicon-containing film deposited thereon and a patterned mask layer deposited on the silicon-containing layer, wherein the oxygen and iodine-containing etching compound has the f...