US Patent Issued to Kyoto University on July 15 for "Silicon carbide ceramic" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,358,842, issued on July 15, was assigned to Kyoto University (Kyoto, Japan).

"Silicon carbide ceramic" was invented by Tatsuya Hinoki (Kyoto, Japan) and Shohei Yanagawa (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An object of the present invention is to provide an SiC ceramics having an excellent environmentally resistant coating.An SiC ceramics comprising a metal oxide, the SiC ceramics comprising a surface modification layer containing a silicate, the surface modification layer being derived from a raw material forming the SiC ceramics, which is a matrix."

The patent was filed on Dec. 22, 2023, under Application No. 18/394,548.

*For...