ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,230, issued on Aug. 19, was assigned to KYOTO UNIVERSITY (Kyoto, Japan).
"SiC semiconductor device manufacturing method and SiC semiconductor device" was invented by Tsunenobu Kimoto (Kyoto, Japan), Takuma Kobayashi (Kyoto, Japan) and Keita Tachiki (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A SiC semiconductor device manufacturing method includes a step of etching a surface of a SiC substrate 1 with H2 gas at a temperature of 1200deg C. or more, a step of forming a SiO2 film 3, 4 on the SiC substrate under conditions where the SiC substrate is not oxidized, and a step of thermally treating the SiC substrate formed with the SiO2 fil...